AO6601 30v complementary mosfet general description product summary n-channel p-channel v ds = 30v -30v i d = 3.4a (v gs =10v) -2.3a (v gs =-10v) r ds(on) r ds(on) < 60m (v gs =10v) < 115m (vgs=-10v) < 70m (v gs =4.5v) < 150m (vgs=-4.5v) < 90m (v gs =2.5v) < 200m (vgs=-2.5v) symbol parameter the AO6601 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel units g2 d2 s2 n - channel p - channel g1 d1 s1 s2 s1 g2 g1 d2 d1 top view 1 2 3 6 5 4 tsop6 top view bottom view pin1 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 64 80 106 150 gate-source voltage maximum junction-to-ambient a thermal characteristics 12 t a =70c junction and storage temperature range power dissipation b parameter typ 12 -2.3 3.4 2.7 c a 0.73 -55 to 150 w 20 c/w r q ja 78 -1.8 -15 units 110 max 1.15 -30 drain-source voltage 30 v t a =25c t a =70c p d pulsed drain current c continuous drain current i d t a =25c parameter 1.15 0.73 max n-channel max p-channel units v rev 6: dec. 2012 www.aosmd.com page 1 of 9
AO6601 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.5 1 1.5 v i d(on) 20 a 46 60 t j =125c 73 88 50 70 m w 62 90 m w g fs 14 s v sd 0.75 1 v i s 1.5 a c iss 185 235 285 pf c oss 25 35 45 pf c rss 10 18 25 pf r g 0.9 1.8 2.7 w q g (10v) 10 12 nc q g (4.5v) 4.7 6 nc q gs 0.95 nc q gd 1.6 nc t d(on) 3.5 ns t r 1.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =15v, r l =4.4 w , total gate charge v gs =10v, v ds =15v, i d =3.4a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =3.4a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance m a v ds =v gs i d =250 m a v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current m w on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =3.4a r ds(on) static drain-source on-resistance i dss v gs =4.5v, i d =3a v gs =0v, v ds =15v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage v gs =2.5v, i d =2a t r 1.5 ns t d(off) 17.5 ns t f 2.5 ns t rr 8.5 12 ns q rr 2.55 4 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =3.4a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =4.4 w , r gen =3 w turn-off fall time i f =3.4a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 6: dec. 2012 www.aosmd.com page 2 of 9
AO6601 n-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 30 40 50 60 70 80 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =3.4a v gs =4.5v i d =3a v gs =2.5v i d =2a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 10v 2.5v 3v 4.5v v gs =2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 140 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =3.4a 25 c 125 c rev 6: dec. 2012 www.aosmd.com page 3 of 9
AO6601 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =3.4a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms to - ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150 c/w t on t p d single pulse rev 6: dec. 2012 www.aosmd.com page 4 of 9
AO6601 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 6: dec. 2012 www.aosmd.com page 5 of 9
AO6601 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.6 -1 -1.4 v i d(on) -15 a 88 115 t j =125c 143 200 103 150 m w 139 200 m w g fs 8 s v sd -0.78 -1 v i s -1.5 a c iss 205 260 315 pf c oss 25 37 50 pf c rss 10 20 30 pf r g 4 8 12 w q g (10v) 4.5 5.9 7 nc q g (4.5v) 2 2.8 4 nc q gs 0.7 nc q gd 1 nc t d(on) 6 ns t r 3.5 ns reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters m a v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-2.3a forward transconductance i s =-1a,v gs =0v v ds =-5v, i d =-2.3a v gs =-2.5v, i d =-1a diode forward voltage p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss v ds =v gs i d =-250 m a r ds(on) static drain-source on-resistance m w v gs =-4.5v, i d =-2a gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =-15v, i d =-2.3a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =-15v, r l =6 w , t r 3.5 ns t d(off) 20 ns t f 5 ns t rr 11.5 15 ns q rr 4.5 6 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =-2.3a, di/dt=100a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =-2.3a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =-15v, r l =6 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 6: dec. 2012 www.aosmd.com page 6 of 9
AO6601 p-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 50 70 90 110 130 150 170 190 210 0 2 4 6 8 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-2.5v i d =-1a v gs =-10v i d =-2.3a v gs =-4.5v i d =-2a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 3 6 9 12 15 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-2v -2.5v -10v -4.5v -3v v gs =-2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 50 100 150 200 250 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-2.3a 25 c 125 c rev 6: dec. 2012 www.aosmd.com page 7 of 9
AO6601 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-2.3a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to - ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms to - ambient (note f) operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =150 c/w t on t p d single pulse rev 6: dec. 2012 www.aosmd.com page 8 of 9
AO6601 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 6: dec. 2012 www.aosmd.com page 9 of 9
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